GaN epitaxy substrate

Min Order:1 piece

Industry:Electronic Components & Supplies

Substrate Material: High purity zinc selenide (ZnSe) infrared crystal

Transmission Band: 0.6~18μm, excellent transmittance at 10.6μm CO₂ laser wavelength

Customizable Spec: Custom round/square dimension, thickness, edge chamfer, IR AR coating

Core Application: CO₂ laser equipment, infrared thermometer, FTIR spectrometer, gas detection sensor

Region:GUANGDONG/DONGGUAN

Port:Shenzhen, Guangzhou

Payment Method:T/T, L/C, D/P D/A, MoneyGram, Credit Card, PayPal, Westem Union, Cash, Escrow

Min Order:100 piece

Industry:Consumer Electronics

Color: Black, White, Yellow

Form Factor: In Ear

Connectivity Technology: Wireless

Charging Time: 2 Hours

Region:guangdong/dongguan

Port:Shenzhen,, Ningbo

Payment Method:T/T, L/C

Min Order:1 piece

Industry:Electronic Components & Supplies

Substrate Material: High purity monocrystalline silicon (CZ / MCZ / FZ growth)

Size Range: Custom diameter 1", 2", 3", 4", 5", 6", 8", 12" (25.4mm–300mm)

Customizable Spec: Orientation <100>/<111>/<110>, N/P type, resistivity, single/double side polished

Core Application: Semiconductor IC, MEMS, lab material test, optical infrared substrate, solar cell substrate

Region:GUANGDONG/DONGGUAN

Port:Shenzhen, Guangzhou

Payment Method:T/T, L/C, D/P D/A, MoneyGram, Credit Card, PayPal, Westem Union, Cash, Escrow

Unit Price:US $5.5 /piece

Min Order:1000 piece

Industry:Consumer Electronics

Voltage: 24.0V

Short circuit current: 5.25A

Irradiation ratio: 23%

Power tolerance: +5%

Service life: > 10 years

Weight: 3.8kg

Front plate glass: no glass

Rear plate glass: no glass

Border: no border

Min Order:1000 piece

Industry:Consumer Electronics

Voltage: 24.0V

Short circuit current: 5.25A

Irradiation ratio: 23%

Power tolerance: +5%

Service life: > 10 years

Weight: 3.8kg

Front plate glass: no glass

Rear plate glass: no glass

Border: no border

Min Order:1 piece

Industry:Electronic Components & Supplies

Material: High‑Purity Fused Silica (Amorphous SiO₂)

SiO₂ Purity: ≥99.99%

Diameter: 2″, 3″, 4″, 6″, 8″, 12″ (custom available)

Thickness: 0.1 mm – 5 mm (custom thickness)

TTV (Total Thickness Variation): ≤5 μm (high precision ≤1 μm)

Surface Quality: 60/40, 40/20, 20/10 (MIL‑STD)

Surface Roughness (Ra): ≤1 nm (DSP), ≤2 μm (lapped)

Optical Flatness: λ/2, λ/4, λ/10 @ 633 nm

Parallelism: <30 arcsec

Transmittance Range: 185 nm – 3500 nm

Average Transmittance: >90%

Thermal Expansion Coefficient: 5.5 × 10⁻⁷ /°C

Instant Temp Resistance: 1300°C

Available Finishes: DSP (double‑side polished), SSP (single‑side polished), lapped

Optional Features: Notch, flat edge, drilling, coating (AR/UV/IR)